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T0800
5-Channnel Laser Driver with RF Oscillator and 2 Outputs
Description
The T0800 is a laser diode driver for the operation of two different, grounded laser diodes for DVD-RAM (650 nm) and CD-RW (780 nm). It includes five channels for five different optical power levels which are controlled by a separate IC. The read channel generates a continuous output level. The channels 2 to 5 are provided as write channels with very fast switching speeds. When a `low' signal is applied to the NE pins, write current pulses are enabled. All channels are summed together and switched to one of the two outputs IOUTA or IOUTB by the select input SELA. Each channel can contribute up to 150 mA to the total output current of up to 200 mA. A total gain of 100 is provided between each reference current input and the selected output. Although the reference inputs are current inputs, voltage control is possible by using external resistors. An on-chip RF oscillator reduces laser mode hopping noise during read mode. Frequency and swing can be set independently for the two selectable outputs with two pairs of resistors. Oscillation is enabled by a `high' signal at the ENOSC pin. Complete output current and oscillator switch-off is achieved by a `low' signal at the ENABLE input. D Oscillator frequency range from 100 MHz to 600 MHz D Oscillator swing to 100 mA D Single 5-V power supply D Common enable/disable input D TTL/CMOS control signals D Small SSO24 package
Features
D Current-controlled output current source with 5 input channels D 2 selectable outputs for grounded laser diodes D Output current per channel up to 150 mA D Total output current up to 200 mA D Rise time 1.0 ns / fall time 1.1 ns D On-chip RF oscillator D Control of 2 different frequencies and swings by use of 4 external resistors
Application
D DVD-RAM with CD-RW capability
Block Diagram
I5 NE5 I4 NE4 I3 NE3 I2 NE2 IR
Channel 5
Channel 4
Channel 3
Output 1
IOUTA
Channel 2
Output 2
IOUTB
Read channel
ENABLE ENOSC
RF oscillator
RFA RFB RSA RSB
SELA
Figure 1. Block diagram
Rev.: A1, 10-May-00
1 (8)
Target Specification
T0800
Pin Description
Pin Symbol Type Function 1 IR Analog Input current, bias voltage approx. GND 2 I2 Analog Input current, bias voltage approx. GND 3 I3 Analog Input current, bias voltage approx. GND 4 I4 Analog Input current, bias voltage approx. GND 5 I5 Analog Input current, bias voltage approx. GND 6 RFA Analog External resistor to GND sets frequency of oscillator A 7 RFB Analog External resistor to GND sets frequency of oscillator B 8 NE2 Digital Digital control of channel 2 (low active) 9 NE3 Digital Digital control of channel 3 (low active) 10 NE4 Digital Digital control of channel 4 (low active) 11 NE5 Digital Digital control of channel 5 (low active) 12 ENDigital Enables output current (high ABLE active) 13 VCC Supply +5V power supply 14 ENOSC Digital Enables RF oscillator (high active) 15 SELA Digital High: selects IOUTA, RFA, RSA Low: selects IOUTB, RFB, RSB Output current source B for laser diode External resistor to GND sets swing of oscillator B External resistor to GND sets swing of oscillator A Ground Output current source A for laser diode +5V power supply
IR I2 I3 I4 I5 RFA RFB NE2 NE3
1 2 3 4 5 6
24 VCC 23 VCC 22 IOUTA 21 IOUTA 20 GND 19 RSA
T0800
7 8 9 18 RSB 17 IOUTB 16 IOUTB 15 SELA 14 ENOSC 13 VCC
Figure 2. Pinning
NE4 10 NE5 11 ENABLE 12
16/ 17 18 19 20 21/ 22 23/ 24
IOUTB Analog RSB RSA Analog Analog
GND Supply IOUTA Analog VCC Supply
2 (8)
Rev.: A1, 10-May-00
Target Specification
T0800
Absolute Maximum Ratings
Parameter Supply voltage Input voltage at IR, I2, I3, I4, I5 Input voltage at NE2, NE3, NE4, NE5, ENOSC Output voltage Power dissipation Junction temperature Storage temperature range 1R thJA v 80 K/W Symbol VCC VIN1 VIN2 VOUT Ptot TJ Tstg Value -0.5 to +6.0 -0.5 to + 0.5 -0.5 to VCC + 0.5 -0.5 to VCC -1 11 150 -65 to +125 Unit V V V V W _C _C
Thermal Resistance
Parameter Junction ambient Symbol RthJA Value 135 Unit K/W
Operating Range
Parameter Supply voltage range Input current External resistor to GND to set oscillator frequency External resistor to GND to set oscillator swing Operating temperature range Symbol VCC IIR, II2, II3, II4, II5 RFA, RFB RSA, RSB Tamb Value 4.5 to 5.5 <2 >3 > 100 0 to +70 Unit V mA k _C
Electrical Characteristics
VCC = 5 V, Tamb = 25_C, ENABLE=High, NE2=NE3=NE4=NE5=High, ENOSC=Low, unless otherwise specified Parameter Power Supply Supply current, power down Supply current, read mode, oscillator disabled Supply current, read mode, oscillator enabled, output A selected Supply current, write mode Test Conditions / Pins Symbol Min. Typ. 0.5 90 100 Max. Unit mA mA mA
ENABLE = Low, ICCPD2 NE2=NE3=NE4=NE5=Low IIR=II2= II3= II4= II5= 125 A ICCR1 IIR=II2= II3= II4= II5= 125 A, ENOSC=High, RS = 430 , RF = 7.5 K, SELA = High IIR=II2= II3= II4= II5= 125 A, NE2=NE3=NE4=NE5=Low IIR=II2=II3=II4= II5= 0 A ICCR2
ICCW
195
mA
Supply current, input off VCC shutdown voltage
ICCoff VSHUT
18 2.4
mA V
Rev.: A1, 10-May-00
3 (8)
Target Specification
T0800
Electrical Characteristics (continued)
VCC = 5 V, Tamb = 25_C, ENABLE=High, NE2=NE3=NE4=NE5=High, ENOSC=Low, unless otherwise specified Parameter Test Conditions / Pins Symbol Min. Typ. Max. Unit Digital Inputs NE2/NE3/NE4/NE5 low VNELO 1.3 V voltage NE2/NE3/NE4/NE5 high VNEHI 2.0 V voltage SELA low voltage VSELA0.5 V
LO
SELBA high voltage ENABLE low voltage ENABLE high voltage ENOSC low voltage ENOSC high voltage Current at Digital Inputs NE2/NE3/NE4/NE5 low cur- NE = 0 V rent NE2/NE3/NE4/NE5 high NE = 5 V current SELA low current SELA = 0 V SELA high current ENABLE low current ENABLE high current ENOSC low current ENOSC high current SELA = 5 V ENABLE = 0 V ENABLE = 5 V ENOSC = 0 V ENOSC = 5 V
VSELAHI
2.7 0.5 2.7 0.5 2.0 -300 800 -50 150 -150 100 -100 800
V V V V V A A A A A A A A
VENLO VENHI VEOLO VEOHI INELO INEHI ISELALO
ISELAHI
IENLO IENHI IEOLO IEOHI
Electrical Characteristics Laser Amplifier
VCC = 5 V, Tamb = 25_C, ENABLE=High, unless otherwise specified Parameter Test Conditions / Pins Symbol Outputs IOUTA and IOUTB Best fit current gain Any channel 1 GAIN Best fit current offset Any channel 1 IOS 1 Output current linearity Any channel ILIN Input current range Input is sinking IDAC Output current per channel Output is sourcing IOUTR IIN input impedance RIN is to GND RIN NE threshold Temperature stabilized VTH Output off current 1 ENABLE = Low IOFF1 Output off current 2 NE2=NE3=NE4=NE5= IOFF2 High Output off current 3 NE2=NE3=NE4=NE5= IOFF3 Low, IIR=II2=II3=II4=II5= 0 A IOUT supply sensitivity, read IOUT = 40mA, VCC = 5 V VSER mode 10%, read-only 4 (8) Min. Typ. 100 -8 -3 0 150 150 +4 +3 2 200 1.68 250 1 1 5 Max. Unit mA/mA mA % mA mA V mA mA mA
-4
1
%V
Rev.: A1, 10-May-00
Target Specification
T0800
Electrical Characteristics (continued) Laser Amplifier
VCC = 5 V, Tamb = 25_C, ENABLE=High, unless otherwise specified Parameter Test Conditions / Pins Symbol IOUT supply sensitivity, write IOUT = 80 mA, 40 mA read + VSEW mode 40 mA write, VCC = 5 V 10% IOUT current output noise IOUT = 40 mA, INOO ENOSC = Low IOUT temperature sensitivity, IOUT = 40 mA, read only TSER read mode IOUT temperature sensitivity, IOUT = 80 mA, 40 mA read + TSEW write mode 40 mA write Min. -6 Typ. Max. 0 Unit %V nA/rt- Hz ppm/C ppm/C
tbd 100 100
Laser Current Amplifier Outputs AC Performance
VCC = +5 V, IOUT = 40 mA DC with 40-mA pulse, TA = 25C unless otherwise specified Parameter Test Conditions / Pins Outputs IOUTA and IOUTB Write rise time IOUT = 40 mA (read) + 40 mA (10%-90%) 1) Write fall time IOUT = 40 mA (read) + 40 mA (10%-90%) 1) Output current overshoot IOUT = 40 mA (read) + 40 mA 1) IOUT ON prop delay NE 50% High-Low to IOUT at 50% of final value IOFF OFF prop delay NE 50% Low-High to IOUT at 50% of final value Disable time ENABLE 50% High-Low to IOUT at 50% of final value Enable time ENABLE 50% Low-High to IOUT at 50% of final value Disable time oscillator ENOSC 50% Low-High to IOUT at 50% of final value Enable time oscillator ENOSC 50% High-Low to IOUT at 50% of final value SELA delay SELA Low-High 50% to IOUT at 50% of final value SELA delay SELA High-Low 50% to IOUT at 50% of final value Amplifier bandwidth IOUT = 50 mA, all channels, -3 dB value Oscillator frequency RF = 4.7 k Oscillator temperature coeffi- RF = 4.7 k cient Symbol tRISE tFALL OS tON tOFF tDIS tEN TDISO TENO TSAH TSAL BWLCA FOSC TCOSC 380 Min. Typ. 1.0 1.1 5 2.0 2.0 20 20 3 20 tbd tbd 20 470 -150 560 Max. 3.0 3.0 Unit ns ns % ns ns ns ns ns ns ns ns MHz MHz ppm/C
1) Load resistor at IOUT 10 , measurement with a 50- oscilloscope and a 39- series resistor.
Rev.: A1, 10-May-00
5 (8)
Target Specification
T0800
Application Information Oscillator
700 600 Swing ( normalized ) 3 4 5 6 7 8 9 10 500 400 300 200 RFA, RFB ( kOhm ) 1.2 1.0 0.8 0.6 0.4 0.2 0.0 100
Frequency ( MHz )
200
300 Frequency ( MHz )
400
500
Figure 3. Frequency vs. resistor RFA and RFB
120 100 Iswing ( mApp) 80 60 40 20 0 0 300 600 900 1200 1500 RSA, RSB ( Ohm )
Figure 5. Frequency dependency of swing
Figure 4. Swing vs. resistor RSA and RSB
Timing Diagram
ENABLE NE2 NE3 NE4 NE5 tON tON IOUT tON tEN tr tr Figure 6. Timing diagram tr tON tr tf tf tf tf tOFF tOFF tOFF tOFF tDIS
6 (8)
Rev.: A1, 10-May-00
Target Specification
T0800
Typical Application Circuit
VCC
1 2 IR I2 I3 I4 I5 VCC VCC IOUTA 24 23 22
Analog
3 4 5
LD
IOUTA 21 GND 20 19 18 17 16 15 14 13
RFA RFB
6 RFA 7 RFB 8 NE2 9 NE3 10 NE4 11 12 NE5
RSA RSB LD
T0800
RSA RSB IOUTB IOUTB SELA ENOSC VCC
Digital
ENABLE
VCC
Figure 7. Application circuit
Package Information
Package SSO24
Dimensions in mm
8.05 7.80 5.7 5.3 4.5 4.3
1.30 0.25 0.65 7.15 24 13 0.15 0.05 0.15 6.6 6.3
technical drawings according to DIN specifications
1
12
Rev.: A1, 10-May-00
7 (8)
Target Specification
T0800
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. TEMIC Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
2.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify TEMIC Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Data sheets can also be retrieved from the Internet: http://www.temic-semi.com
TEMIC Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2594, Fax number: 49 (0)7131 67 2423
8 (8)
Rev.: A1, 10-May-00
Target Specification

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